o top i g o back g i wbfbp-03b plastic-encapsulate transistors TSC114ENND03 transistor description npn digital transistor features 1) built-in bias resistors enable the confi guration of an inverter circuit without connecting external input resistors (see equivalent circuit) 2) the bias resistors consis t of thin-film resistors with complete isolation to a llow egative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects 3) only the on/off conditions need to be set for operation, making device design easy. application npn digital transistor for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking: 24 equivalent circuit o 24 i g absolute maximum ratings (ta=25 ) parameter symbol limits unit supply voltage v cc 50 v input voltage v in -10~40 v i o 50 output current i c(max) 100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) 0.5 v cc =5v ,i o =100 a input voltage v i(on) 3 v v o =0.3v ,i o =10 ma output voltage v o(on) 0.3 v i o /i i =10ma/0.5ma input current i i 0.88 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 30 v o =5v ,i o =5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 0.8 1 1.2 transition frequency f t 250 mhz v ce =10v ,i e =-5ma,f=100mhz wbfbp-03b (1.21.20.5) unit: mm 1. in 2. gnd 3. out 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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